Product Summary
The 2N5302 is a Silicon NPN Power Transistor with TO-3 package.
Parametrics
Absolute maximum ratings: (1)Collector-base voltage:60V; (2)Collector-emitter voltage:60V; (3)Emitter-base voltage:5V ; (4)Collector current:30A; (5)Base current:7.5A; (6)Total power dissipation:200W; (7)Junction temperature:200℃; (8)Storage temperature:-65℃ to 200℃.
Features
Features: (1)With TO-3 package ; (2)Complement to type 2N4398/4399/5745; (3)Low collector/saturation voltage; (4)Excellent safe operating area.
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() 2N5302 |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 30A 60V 200W NPN |
![]() Data Sheet |
![]() Negotiable |
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![]() 2N5302G |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 30A 60V 200W NPN |
![]() Data Sheet |
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